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Valence band offset of ZnO/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：0
  • 页码：3063-3066
  • 语言：英文
  • 相关项目：生长温度周期调制的MOCVD法制备p型ZnO薄膜研究
作者： Jiao, C. M.|Zhang, P. F.|Fan, H. B.|Sun, G. S.|Liu, X. L.|Zhu, Q. S.|Wang, Z. G.|Zhang, R. Q.|Wei, H. Y.|Yang, S. Y.|Chen, Y. H.|
同期刊论文项目
生长温度周期调制的MOCVD法制备p型ZnO薄膜研究
期刊论文 19 专利 8
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