中文摘要：

采用金属有机物化学气相沉积（MOCVD）方法在蓝宝石衬底上制备了p-GaN单晶薄膜.高温（〉1100℃）处理及未处理样品的双晶摇摆曲线测试表明高于1150℃会使材料的晶体质量明显变差,这为平面型紫外探测器制备中的部分注入激活条件提供了选择依据.通过TRIM软件优化了注入条件,在选择性注入改型材料上成功制备了平面GaN p-n结型光电探测器.测试结果表明：室温下的零偏压暗电流密度为4.7 nA/cm2,而-5 V偏压下的暗电流密度则达到了67μA/cm2.室温下的峰值响应率0.065 A/W出现在368 nm处.在低温下器件的峰值响应明显降低,80 K时,360 nm处的峰值响应率仅为0.039 A/W.禁带宽度、串联电阻、内建电场等是引起探测器响应率随温度降低的原因.

英文摘要：

The annealing temperature dependence of FWHM of X-ray rocking curves of p-GaN layers grown on sapphire substrate by metal organic chemical vapor deposition（MOCVD） were studied.The results show that the quality of p-GaN became worse at annealing temperature higher than 1150℃.The implantation conditions were simulated by TRIM.The planar GaN p-n detectors were fabricated by Si implantation into p-GaN.The current-voltage（I-V） curve at room temperature shows that the dark current density is 4.7nA/cm2 at zero voltage bias.The peak responsivity is 0.065 A/W and 0.039A/W at 368 nm at room temperature and 80 K,respectively.It decreases obviously with the decrease of temperature as a result of the changes in bandgap,series resistance,and build-in potential with temperature.