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Low turnoff loss reverse-conducting IGBT with double n-p-n electron extraction paths
  • ISSN号：0013-5194
  • 期刊名称：Electronics Letters
  • 时间：2012.4.4
  • 页码：457-458
  • 相关项目：高速高压IGBT瞬态抽出模型与新结构
作者： H.Jiang|B.Zhang|W.Chen|M.Qiao|Z.Li|C.Liu|Z.Rao|
同期刊论文项目
高速高压IGBT瞬态抽出模型与新结构
期刊论文 12 会议论文 7 专利 15
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