中文摘要：

在低温强磁场条件下,对In0.53Ga0.47As/In0.52Al0.48As量子阱中的二维电子气进行了磁输运测试.在低磁场范围内观察到正磁电阻效应,在高磁场下这一正磁电阻趋于饱和,分析表明这一现象与二维电子气中的电子占据两个子带有关.在考虑了两个子带之间的散射效应后,通过分析低磁场下的正磁电阻,得到了每个子带电子的迁移率,结果表明第二子带电子的迁移率高于第一子带电子的迁移率.进一步分析表明,这主要是由两个子带之间的散射引起的.

英文摘要：

Magnetotransport measurements have been carried out on In_0.53Ga0.47As/In0.52Al0.48As quantum wells in a temperature range between 1.5 and 77K.We have observed a large positive magnetoresistance in the low magnetic field range,but saturating in high magnetic fields.The magnetoresistance results from two occupied subbands in the two-dimensional electron gas.With the intersubband scattering considered,we obtained the subband mobility by analyzing the positive magnetoresistance.It is found that the second subband mobility is larger than that of the first due to the existence of the intersubband scattering.