中文摘要：

研究了低温（1·5K）和强磁场（0—13T）条件下,InP基In0·53Ga0·47As/In0·52Al0·48As量子阱中电子占据两个子带时填充因子随磁场的变化规律.结果表明,在电子自旋分裂能远小于朗道能级展宽的情况下,如果两个子带分裂能是朗道分裂能的整数倍时,即ΔE21=kωc（其中k为整数）,填充因子为偶数;当两个子带分裂能为朗道分裂能的半奇数倍时,即ΔE21=（2k＋1）ωc/2,填充因子出现奇数.

英文摘要：

The magnetic field dependence of filling factors has been investigated on InP based In0.53Ga0.47As/In0.52Al0.48As quantum well samples with two occupied subbands by means of magnetotransport measurements at the temperature of 1.5K in a magnetic field range of 0 to 13T. Under the condiction that Laundau-level broadening is larger than the spin splitting of each subband, filling factors are even when the splitting energy of two subbands is an integer multiple of the cyclotron energy, i.e.ΔE21=kωc. If the splitting energy of two subbands is half of an odd interger multiple of the cyclotron erergy, i.e.ΔE21=（2k＋1）ωc/2, the filling factor is odd.