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Numerical study of the advantages of ultraviolet light-emitting diodes with a single step quantum we
ISSN号:0306-8919
期刊名称:Optical and Quantum Electronics
时间:2013.5.5
页码:381-387
相关项目:非极性面ZnO/ZnCdO量子阱结构LED外延材料生长与器件制备研究
作者:
Tian, W.|Feng, Z. H.|Liu, B.|Xiong, H.|Zhang, J. B.|Dai, J. N.|Cai, S. J.|Chen, C. Q.|
同期刊论文项目
非极性面ZnO/ZnCdO量子阱结构LED外延材料生长与器件制备研究
期刊论文 13
会议论文 3
同项目期刊论文
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Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Bloc
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