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A reproducible route to p-ZnO films and their application in light-emitting devices
  • ISSN号：0146-9592
  • 期刊名称：Optics Letters
  • 时间：2011.2.2
  • 页码：499-501
  • 相关项目：基于原子层镶嵌方法的氧化锌p型掺杂研究
作者： Sun, F.|Shan, C. X.|Li, B. H.|Zhang, Z. Z.|Shen, D. Z.|Zhang, Z. Y.|Fan, D.|
同期刊论文项目
基于原子层镶嵌方法的氧化锌p型掺杂研究
期刊论文 25
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Low-threshold electrically pumped ultraviolet laser diode
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Degenerated MgZnO films obtained by excessive zinc
Ultraviolet emissions realized in ZnO via an avalanche multiplication process
MgZnO avalanche photodetectors realized in Schottky structures
High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumpe
硼对氮掺杂的p型ZnO薄膜的影响
Stable p-type ZnO films obtained by lithium-nitrogen codoping method
Light-emitting diodes fabricated from small-size ZnO quantum dots
MgZnO p-n heterostructure light-emitting devices
High responsivity ultraviolet photodetector realized via a carrier-trapping process
Intense emission from ZnO nanocolumn Schottky diodes
Self-powered spectrum-selective photodetectors fabricated from n-ZnO/p-NiO core-shell nanowire array
Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO
Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures
Evaluation of the frequency instability limited by Dick effect in the microwave 199Hg＋ trapped-ion clock
Comparison experiments of neon and helium buffer gases cooling in trapped 199^Hg^＋ ions linear trap