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MgZnO p-n heterostructure light-emitting devices
ISSN号:0146-9592
期刊名称:Optics Letters
时间:2013.6.6
页码:2113-2115
相关项目:基于原子层镶嵌方法的氧化锌p型掺杂研究
作者:
Li, Bing-Hui|Zhang, Zhen-Zhong|Liu, Ke-Wei|Shen, De-Zhen|
同期刊论文项目
基于原子层镶嵌方法的氧化锌p型掺杂研究
期刊论文 25
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ZnO light-emitting devices with a lifetime of 6.8 hours
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Ultraviolet emissions realized in ZnO via an avalanche multiplication process
MgZnO avalanche photodetectors realized in Schottky structures
High Mg-content wurtzite MgZnO alloys and their application in deep-ultraviolet light-emitters pumpe
硼对氮掺杂的p型ZnO薄膜的影响
Stable p-type ZnO films obtained by lithium-nitrogen codoping method
Light-emitting diodes fabricated from small-size ZnO quantum dots
High responsivity ultraviolet photodetector realized via a carrier-trapping process
Intense emission from ZnO nanocolumn Schottky diodes
Self-powered spectrum-selective photodetectors fabricated from n-ZnO/p-NiO core-shell nanowire array
Control of N/N(2) species ratio in NO plasma for p-type doping of ZnO
Pure ultraviolet emission from ZnO nanowire-based p-n heterostructures
Evaluation of the frequency instability limited by Dick effect in the microwave 199Hg+ trapped-ion clock
Comparison experiments of neon and helium buffer gases cooling in trapped 199^Hg^+ ions linear trap