中文摘要：

借助半导体仿真工具Silvaco中所提供的工艺摸拟器（Athena）和器件摸拟器（Atlas），及L-Edit版图设计工具，设计了一款击穿电压高于-90V、阈值电压为-4V的P沟VDMOS器件。经实际流片测试，器件的导通电阻小于200mΩ，跨导为5S，栅-源泄漏电流和零栅电压时的漏-源泄漏电流均在纳安量级水平，二极管正向压降约为-1V。采用2-D器件仿真方法以及相关物理模型对所设计的p沟VDMOS器件的单粒子烧毁（SEB）和单粒子栅击穿（SEGR）效应进行了分析和研究，并通过对所获得的器件样片采用钴-60γ射线源进行辐照实验，研究了在一定剂量率、不同总剂量水平条件下辐照对所研制的p沟VDMOS器件相关电学参数的影响情况。

英文摘要：

With process simulator （Athena） and device layout editor, one type of p-channel VDMOS was designed, simulator （Atlas） in whose BVDss is higher Silvaco and L-Edit than -90 V, and VCS（th） is -4 V. The test results show that RDS（on） is less than 200 m Ω, gfs is 5 S, IGSS and IDssare all in level of nA and VSD is about -1 V. Utilizing 2-D device simulation method and related simulation models, the single-event burnout （SEB） and single-event gate rupture （SEGR） effects of the designed p-channel VDMOS were analyzed. Through irradiating the device samples using Co-60 7ray source, the irradiation effects on some electrical parameters of the designed p-channel VDMOS with certain dose rate and different dose levels were studied.