中文摘要：

利用射频磁控溅射技术，以PbOx为过渡层，在Pt（111）/Ti/SiO2/Si（100）衬底上，采用原位溅射技术制备了高度（100）取向的[（Pb0.90La0.10）Ti0.975O3/Pb（Zr0.20Ti0.80）O3]n（n=1，2）{筒记为[PLT/PZT]。）多层铁电薄膜，研究了层数对多层铁电薄膜介电性能和铁电性能的影响。研究得出，（100）取向的PbOx，过渡层导致了[PLT/PZT]。多层铁电薄膜的（100）择优取向；高度（100）择优取向的[PLT/PZT]2薄膜具有更大的剩余极（2Pr=31.45μC/cm）和更好的“蝴蝶”状C-V曲线。这些研究结果表明，所制备的（100）取向的[PLT/PZT]2多层铁电薄膜具有优良的铁电性能。

英文摘要：

Highly （100）-oriented [（Pb0.9oLa0.10）Ti0.975O3/Pb（Zr0.20Ti0.80）O3],（n=1,2） [PLT/PZT], multilayered thin films were in situ deposited on the PbOx buffer layer/Pt（111）/Ti/SiO2/Si（100） by RF magnetron sputtering. The PbOx buffer layer leads to the （100）-oriented [PLT/PZT], multilayered thin films. The effect of layer＇s number on the dielectric and ferroelectric properties of [PLT/PZT]n multilayered thin films was studied. The experimental results indicate that the highly （100）-oriented [PLT/PZT]2 multilayered films possessed better dielectric and ferroelectric properties with larger remnant polarization （2Pr=31.45 μC/cm^2） and better butterfly-shaped C-V characteristic curve as compared with the （100）-oriented [PLT/PZT]1 multilayered films. These results show that the [PLT/PZT]2 multilayered thin films possess good ferroelectric properties.