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Evolution of wetting layer in InAs/GaAs quantum dot system
  • ISSN号：1931-7573
  • 期刊名称：Nanoscale Research Letters
  • 时间：0
  • 页码：79-83
  • 语言：中文
  • 相关项目：超晶格解理面上应变自组织纳米结构生长和光电性质研究
作者： Chen, Y. H.|Wang, Z. G.|Ye, X. L.|
同期刊论文项目
超晶格解理面上应变自组织纳米结构生长和光电性质研究
期刊论文 17 会议论文 2
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