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Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by
  • ISSN号：1556-276X
  • 期刊名称：Nanoscale Research Letters
  • 时间：2015.1.27
  • 页码：1-6
  • 相关项目：InGaAsSb/GaAlAs纳米线异质结量子点外延生长及其单光子发射机理
作者： Wei, Si-Hang|Shang, Xiang-Jun|Ni, Hai-Qiao|Niu, Zhi-Chuan|
同期刊论文项目
InGaAsSb/GaAlAs纳米线异质结量子点外延生长及其单光子发射机理
期刊论文 34 会议论文 1
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