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Effect of tunable dot charging on photoresponse spectra of GaAs p-i-n diode with InAs quantum dots
  • ISSN号：0021-8979
  • 期刊名称：Journal of Applied Physics
  • 时间：2015.12.28
  • 页码：-
  • 相关项目：InGaAsSb/GaAlAs纳米线异质结量子点外延生长及其单光子发射机理
作者： Ni, Haiqiao|Pettersson, Hakan|Fu, Ying|Niu, Zhichuan|
同期刊论文项目
InGaAsSb/GaAlAs纳米线异质结量子点外延生长及其单光子发射机理
期刊论文 34 会议论文 1
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