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Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using sili
  • ISSN号：2045-2322
  • 期刊名称：Scientific Reports
  • 时间：2014.1.10
  • 页码：3633-
  • 相关项目：InGaAsSb/GaAlAs纳米线异质结量子点外延生长及其单光子发射机理
作者： Ni, H. Q.|Niu, Z. C.|Jiang, D. S.|Sun, B. Q.|
同期刊论文项目
InGaAsSb/GaAlAs纳米线异质结量子点外延生长及其单光子发射机理
期刊论文 34 会议论文 1
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