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中文摘要：
采用一步掩膜法通过射频磁控溅射设备同时制备源极、漏极以及沟道层,采用具有双电荷层效应的壳聚糖薄膜为栅介质,成功制备出以纸张为衬底的超低压薄膜晶体管.这种柔性衬底薄膜晶体管具有良好的电学性能：超低的工作电压（仅为0.8V）,场效应迁移率达到8.1 cm2/（V·s）,亚阈值斜率为80mV/decade,开关电流比高达1.2×107.
英文摘要：
The ITO source/drain electrodes and channel layer were fabricated on paper by one shadow mask process via RF magnetron sputtering deposition at room temperature.The chitosan film with electric double layer effect as gate dielectric were perpared.These flexible TFTs exhibit good performance with ultralow operation voltage of 0.8 V,a field-effect mobility of 8.1cm2/（V · s）,a subthreshold swing of 80 mV/decade and a large on-off ratio of 1.2×107.
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同项目期刊论文
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An Enlarged Canonical Quantization Scheme and Quantization of a Free Particle on Two-Dimensional Sph
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