位置：成果数据库 > 期刊 > 期刊详情页
Bipolar one diode-one resistor integration for high-density resistive memory applications
  • ISSN号：2040-3364
  • 期刊名称：Nanoscale
  • 时间：2013
  • 页码：4785-4789
  • 相关项目：基于原位显微探测技术的阻变存储器微观机制研究
作者： Li, Yingtao|Lv, Hangbing|Liu, Qi|Long, Shibing|Wang, Ming|Xie, Hongwei|Zhang, Kangwei|Huo, Zongliang|Liu, Ming|
同期刊论文项目
基于原位显微探测技术的阻变存储器微观机制研究
期刊论文 16 会议论文 5
同项目期刊论文
Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
An overview of the switching parameter variation of RRAM
Investigation on the RESET switching mechanism of bipolar Cu/HfO2/Pt RRAM devices with a statistical
Response to “comment on real-time observation on dynamic growth/dissolution of conductive
Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt d
Self-Rectifying Resistive-Switching Device With a-Si/WO3 Bilayer
掺杂技术对阻变存储器电学性能的改进
Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Bas
Nitrogen induced improvement of resistive switching uniformity in HfO2-based RRAM device
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conduct