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掺杂技术对阻变存储器电学性能的改进
  • ISSN号：0023-074X
  • 期刊名称：Chinese Science Bulletin
  • 时间：2012
  • 页码：314-319
  • 分类：TQ575[化学工程—精细化工]
  • 作者机构：[1]兰州大学物理科学与技术学院,兰州730000, [2]中国科学院微电子研究所纳米加工与新器件集成技术研究室,北京100029
  • 相关基金：国家重点基础研究发展计划（2010CB934200,2008CB925002）、国家自然科学基金（60825403,50972160）和国家高技术研究发展计划（2008AA031403,2009AA03Z306）资助
  • 相关项目：基于原位显微探测技术的阻变存储器微观机制研究
作者： 刘琦|吕杭炳|龙世兵|王慰|李颖弢|张森|连文泰|杨建红|刘明|
关键词： 非易失性存储器, 阻变存储器(RRAM), 掺杂技术
中文摘要：

本文总结和分析了掺杂技术对阻变存储器性能的改善．实验上，以Cu／Zr02／Pt器件为基础，分别使用Ti离子、Cu，Cu纳米晶对器件进行掺杂．将掺杂过的器件与未掺杂的器件进行对比，发现掺杂的作用集中在四点：消除电形成过程、降低操作电压、提升电学参数的均一性和提高器件良率．除此之外，使用掺杂还可以提升器件高阻态的稳定性和保持特性．结果表明，掺杂技术是优化RRAM电学性能的有效方法．

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期刊信息
  • 《科学通报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国科学院
  • 主编：周光召
  • 地址：北京东黄城根北街16号
  • 邮编：100717
  • 邮箱：csb@scichina.org
  • 电话：010-64036120 64012686
  • 国际标准刊号：ISSN：0023-074X
  • 国内统一刊号：ISSN：11-1784/N
  • 邮发代号:80-213
  • 获奖情况:
  • 首届国家期刊奖,中国期刊方阵“双高”期刊,第三届中国出版政府奖
  • 国内外数据库收录:
  • 美国化学文摘（网络版）,美国数学评论（网络版）,美国工程索引,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,中国北大核心期刊（2000版）
  • 被引量:81792