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Simulation study of conductive filament growth dynamics in oxide-electrolyte-based ReRAM
  • ISSN号：0253-4177
  • 期刊名称：Chinese Journal of Semiconductors
  • 时间：2014
  • 页码：-
  • 分类：TQ133.3[化学工程—无机化工] TS102.528.5[轻工技术与工程—纺织工程;轻工技术与工程—纺织科学与工程]
  • 作者机构：[1]School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China, [2]Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 相关基金：Project supported by the Ministry of Science and Technology of China （Nos. 2010CB934200, 2011CBA00602, 2009CB930803, 2011CB921804, 2011AA010401,2011AA010402, XDA06020102） and the National Natural Science Foundation of China （Nos. 61221004, 61274091, 60825403, 61106119, 61106082, 61306117）.
  • 相关项目：新型微电子器件集成的基础研究
作者： Sun, Pengxiao|Liu, Su|Li, Ling|Liu, Ming|
关键词： 氧化物电解, 导电丝, 生长动力学, 模拟, 离子迁移率, 质型, 微观结构演变, 几何形状, ReRAM, Monte Carlo method, growth direction of filament, ion migration rate
中文摘要：

Monte Carlo(MC) simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based Re RAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is relative high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament(CF) geometries and I–V characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.

英文摘要：

Monte Carlo （MC） simulations, including multiple physical and chemical mechanisms, were performed to investigate the microstructure evolution of a conducting metal filament in a typical oxide-electrolyte-based ReRAM. It has been revealed that the growth direction and geometry of the conductive filament are controlled by the ion migration rate in the electrolyte layer during the formation procedure. When the migration rate is rela- tive high, the filament is shown to grow from cathode to anode. When the migration rate is low, the growth direction is expected to start from the anode. Simulated conductive filament （CF） geometries and I-V characteristics are also illustrated and analyzed. A good agreement between the simulation results and experiment data is obtained.

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