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Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conduct
  • ISSN号：1616-301X
  • 期刊名称：Advanced Functional Materials
  • 时间：2014.9.24
  • 页码：5679-5686
  • 相关项目：基于原位显微探测技术的阻变存储器微观机制研究
作者： Sun, Haitao|Liu, Qi|Li, Congfei|Long, Shibing|Lv, Hangbing|Bi, Chong|Huo, Zongliang|Li, Ling|Liu, Ming|
同期刊论文项目
基于原位显微探测技术的阻变存储器微观机制研究
期刊论文 16 会议论文 5
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