中文摘要：

采用溶胶-凝胶和旋涂抽滤方法，在硅微通道（Si—MCP）衬底的内壁上涂敷前驱物，然后分别在600℃，650℃，700℃和750℃条件下制备Bi3.15Nd0.85Ti4O12／Si—MCP微纳薄膜阵列，并对其结构及铁电特性进行表征．研究结果显示，退火温度越高，Si—MCP内被局域化的微纳薄膜结晶颗粒尺寸越大，同时BNT／Si—MCP微纳薄膜阵列越趋向沿c轴取向，尤其在750℃下制备的薄膜具有表面形貌均匀和c轴取向程度高等优点，且剩余极化强度可达93．8μC／cm2．

英文摘要：

The micro/nano -scale Bi3.15Nd0.85 Ti3O12/Si-MCP （BNT/Si-MCP） ferroelectric thin film arrays were fabri- cated successfully by the sol-gel, spin-coating and pumping filtration methods. Precursors of BNT were coated on the in- ner wall of Si-MCP. Bi3.15 Nd0.85 Ti3O12 thin film supported by Si-MCP were prepared via annealing in oxygen atmos- phere at 600 ℃, 650℃, 700 ℃ and 750 ℃, respectively. The ferroelectric properties and microstructures of BNT/Si- MCP film arrays were characterized. The results show that with the increase of annealing temperature, the size of BNT grain localized on the inner wall of Si-MCP increases, the uniformity of the surface and the degree of orientation along the c-axis increase, too. The largest remanent polarization （93.8 μC/cm2 ） and lowest leakage current of the micro/ nano-scale BNT/Si-MCP arrays were obtained annealing at 750 ℃.