采用直流反应磁控溅射法于不同温度下在Si(111)基底上制备了Ti/TiN多层膜,采用X射线衍射仪和原子力显微镜对膜的物相和表面形貌进行了分析,研究了沉积温度对膜结构及其光学、电学性能的影响。结果表明:不同沉积温度下制备的Ti/TiN多层膜均由钛和TiN相组成,多层膜与单层TiN膜一样,其表面粗糙度随沉积温度的升高而减小,电阻率随沉积温度的升高显著降低;其表面形貌则比单层膜更加致密和均匀;多层膜红外反射率与其电阻率有关,当电阻率减小时,红外反射率增大。
By DC reactive magnetron sputtering method, Ti/TiN multilayer films were prepared on the Si (111) substrate at different temperatures. The phase and surface morphology of the films were studied by mean of X-ray diffraction and atomic force microscopy, respectively. The effect of the deposition temperature on the structure, optical and electrical properties of the thin-film was investigated. The results show that Ti/TiN multilayer films prepared at different temperatures were all composed of Ti and TiN. With the increase of the deposition temperature the surface roughness of the Ti/TiN multilayer film and TiN single film decreased, and the resistivity reduced significantly. The surface morphology of the multilayer film was more dense and homogenous. The multilayer film infrared reflectance was related to the resistivity. The smaller the resistivity, the larger the infrared reflectance.