中文摘要：

采用DC反应磁控溅射法,在Si（111）和玻璃基底上成功的制备了AlN薄膜。研究溅射过程中溅射气压对薄膜性能的影响。结果表明：薄膜中原子比N/Al接近于1;当溅射气压低于0.6 Pa时,薄膜为非晶态;当溅射气压不低于0.6 Pa时,薄膜的XRD图中均出现了6方相的AlN（100）、（110）和弱的（002）衍射峰,说明所制备的AlN薄膜为多晶态;气压为0.6 Pa时对应衍射峰的半高峰宽较小,薄膜的结晶性较好,随着溅射气压的继续增大,薄膜结晶性变差;在不同的溅射气压（0.6-1.0 Pa）下,AlN薄膜在250-1 000 nm波长范围内的透过率均在82%以上,且随溅射气压的增大略有升高。

英文摘要：

AlN thin films were prepared by DC magnetron reactive sputtering on Si（111） and glass substrates.The influence of sputtering pressure on AlN thin films were investigated.It is shown that the atomic ratio N/Al of the prepared AlN thin films close to 1;when the sputtering pressure is less than 0.6 Pa,the AlN thin films are amorphous;when the sputtering pressure is no less than 0.6 Pa,the thin films are polycrystalline structure with the hexagonal phase（100）,（110） and weak（002） peaks;when the sputtering pressure is 0.6 Pa,the thin films have a good crystallization with the minor full width at half maximum（FWHM）,the crystallization of AlN thin films decreasing with the increases of sputtering pressure.The AlN thin films have high transmission,and it increases slightly with the increasing of sputtering pressure in the wave length range of 250-1 000 nm.