光电标识是完成识别和搜救任务的"眼睛"。作为"眼睛"核心组成器件,MEMS红外光源的工作稳定性对标识效果具有最直接的影响,而MEMS红外光源的工作稳定性取决于辐射薄膜的热稳定性,表现为辐射体薄膜结构工作电阻的动态变化趋势。为此通过开展MEMS红外光源电阻特性研究对于深入探索光电标识装置的标识特性意义重大。采用阻抗分析仪进行测试,结果表明MEMS红外光源长时间工作下其本征电阻值变化量仅为0.4%,热稳定性良好;在可承受驱动电压范围内,光源的动态电阻随电压的变化无明显偏移,薄膜表面形貌变化正常,MEMS红外光源整体结构工作稳定。
Photoelectric identification is the eye of the recognition and search and rescue mission. As the core of the eye, the working stability of MEMS infrared light source has the most direct effects on identification effect, and the working stability of MEMS infrared light source depends on the thermal stability of the film,that is, the dynamic variation of the film working resistance. Therefore research on MEMS infrared light source resistance characteristics to explore the photoelectric device identification features is of great significance. Test results of using impedance analyzer show that the MEMS infrared light intrinsic resistance variation is only 0.4% under long hours work, which means good thermal stability. In the sustainable driving voltage range, the dynamic resistance of the source has no obvious change with the voltage offset. The morphology change of thin film surface is normal, and the integral structure of the MEMS infrared source is stable.