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Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge n(+)/p Diode Achieved by Implantation a
  • ISSN号：1882-0778
  • 期刊名称：Applied Physics Express
  • 时间：2013.10
  • 页码：-
  • 相关项目：金属与锗接触界面微结构改性及势垒高度调控机理研究
作者： Wei, Jiangbin|Huang, Wei|Lai, Hongkai|Chen, Songyan|
同期刊论文项目
金属与锗接触界面微结构改性及势垒高度调控机理研究
期刊论文 63 会议论文 1
同项目期刊论文
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