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中文摘要：
制备了氧化铪（HfO2）高矗介质栅si基Ge／SiGe异质结构肖特基源漏场效应晶体管（SB—MOSFET）器件，研究了n型掺杂Si0.16Ge0.84层对器件特性的影响，分析了i1型掺杂SiGe层降低器件关态电流的机理。使用UHVCVD沉积系统，采用低温Ge缓冲层技术进行了材料生长，首先在si衬底上外延Ge缓冲层，随后生长32nmSi0.16Ge0.84和12nmGe，并生长1nmSi作为钝化层。使用原子力显微镜和x射线衍射对材料形貌和晶体质量进行表征，在源漏区沉积Ni薄膜并退火形成NiGe／Ge肖特基结，制备的P型沟道肖特基源漏MOSFET，其未掺杂Ge／SiGe异质结构MOSFET器件的空穴有效迁移率比相同工艺条件制备的硅器件的高1．5倍，比传统硅器件空穴有效迁移率提高了80％，掺杂器件的空穴有效迁移率与传统硅器件的相当。
英文摘要：
Si-based Ge/SiGe heterostructure Schottky barrier source and drain metal oxide semiconductor field effect transistors （SB-MOSFETs） with hafnium dioxide high-k gate were fabricated. The effect of the n-type doped Si0.16Ge0.84 layer on the device performance was investigated, and the mechanism of the device off-state current reduction caused by the n type doping SiGe layer was analyzed. Firstly, Ge buffer was fabricated with low-temperature Ge buffer technique. Then a 32 nm Si0.16Ge0.84 layer and a 12 nm Ge layer were grown on the Ge buffer in the same UHVCVD system. For comparative study, the 32 nm Si0.16Ge0.84 layer was controlled undoped or n-type doped by P. For all samples, 1 nm Si layer was grown to passivate the Ge surface. Atomic force microscopy and X-ray diffraction were used to characterize the surface morphology and crystal quality of the materials. NiGe/Ge Schottky junctions in source and drain were formed by nickel layer deposition and anneal. The fabricated Ge/SiGe heterosturctual MOSFET device without n-type doping shows 150% enhancement of the hole effective mobility over that of the control Si device and about 80% enhancement over the universal Si device. And the device with n-type doping shows a comparable hole effective mobility with the universal Si MOSFET device.
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