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中文摘要：
金属与Ge材料接触时界面处存在着强烈的费米钉扎效应，尤其与n型Ge形成的欧姆接触的比接触电阻率高，是制约si基Ge器件性能的关键因素之一．本文对比了分别采用金属Al和Ni与si衬底上外延生长的P型Ge和n型Ge材料的接触特性．发现在相同的较高掺杂条件下，NiGe与n型Ge可形成良好的欧姆接触，其比接触电阻率较Al接触降低了一个数量级，掺P浓度为2×10^19cm-3时达到1．43×10-5Ω．cm2．NiGe与P型Ge接触和A1接触的比接触电阻率相当，掺B浓度为4．2×10^18cm-3时达到1．68×10—5Q．cm2．NiGe与n型Ge接触和A1电极相比较，在形成NiGe过程中，P杂质在界面处的偏析是其接触电阻率降低的主要原因．采用NiGe作为Ge的接触电极在目前是合适的选择．
英文摘要：
Large contact resistance due to Fermi level pinning effect at the interface between metal and n-type Ge strongly restricts the performance of Ge device on Si substrate. In this paper, the contacts of metal A1 and Ni with n-type Ge and p-type Ge epitaxial layers grown by UHV/CVD are comparatively studied. It is found that the contact of NiGe/n-Ge is better than that of Al/n-Ge at the same dopant concentration. When the concentration of P is 2 × 10^19 cm-3, the ohmic contact of NiGe/n-Ge with Pc down to 1.43× 10-5 Ω2.cm2 is demomstrated, which is about one order of magnitude lower than that of A1/n-Ge contact. The specific contact resistance of NiGe/p-Ge is 1.68 × 10-5.cm2 when the B concentration is 4.2 × 10^18 cm-3, corresponding to that of Al/p-Ge. Compared with A1/n-Ge contact, P segregation at the interface between NiGe and Ge, rather than lowering Schottky barrier height, is the main reseaon for achieving the low specific contact resistance. NiGe/Ge contact should be a good choice for contact electrode for Ge devices at present.
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