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Wideband Impedance Model for Coaxial Through-Silicon Vias in 3-D Integration
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2013.8
  • 页码：2498-2504
  • 相关项目：基于碳纳米管的三维集成电路硅通孔互连线的建模与仿真
作者： Feng Liang|Gaofeng Wang|Deshuang Zhao|Bing-Zhong Wang|
同期刊论文项目
基于碳纳米管的三维集成电路硅通孔互连线的建模与仿真
期刊论文 13 会议论文 3
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