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中文摘要：
<正>Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries:after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.
英文摘要：
Isotope source energy deposition along the thickness direction of a semiconductor is calculated,based upon which an ideal short current is evaluated for betavoltaic batteries.Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents.A built-in electric field thickness design principle is proposed for betavoltaic batteries：after measuring the energy deposition depth and the carrier drift length,the shorter one should then be chosen as the built-in electric field thickness.If the energy deposition depth is much larger than the carrier drift length,a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.
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