中文摘要：

采用瞬间蒸发技术沉积了N型Bi2Te2.85Se0.15热电薄膜,沉积的薄膜厚度在50~400nm范围之间,并在473K进行1小时的真空退火处理。利用X射线衍射（XRD）、场发射扫描电子显微镜（FE-SEM）和能量散射谱（EDS）分别对薄膜的物相结构、表面形貌以及化学计量比进行表征。XRD分析结果显示,薄膜的主要衍射峰与Bi2Te3和Bi2Se3的标准衍射峰一致,沉积薄膜的最强衍射峰为（015）,退火后,薄膜的最强衍射峰是（006）。采用表面粗糙度测量仪测定薄膜厚度,薄膜的电阻率采用四探针法在室温下进行测量,在室温下对薄膜的Seebeck系数进行表征。测试结果表明,薄膜为N型传导特性。并考察了薄膜厚度对电阻率及Seebeck系数的影响。

英文摘要：

N-type Bi_2Te_2.85Se_0.15 thermoelectric thin films were deposited by flash evaporation method with thickness in the range of 50～400nm.The thin films were annealed at 473 K for one hour.Phase structure,surface morphology and stoichiometric ratio were characterized via X-ray diffractiometry（XRD）, field emission scanning electron microscopy（FE-SEM） and energy dispersive spectroscopy（EDS）.XRD results show that main diffraction peaks of the thin films are in accord with Bi_2Te_3 and Bi_2Se_3 diffraction peaks.As-deposited thin film shows that the（015） peak is the strongest peak.After annealing,it is observed that the（006） peak is the strongest peak.The thicknesses of thin films was measured by using a surface roughometer.Electrical resistivity of the thin films were measured using four-probe method and the Seebeck coefficient was measured at room temperature.Results show that the thin films are n-type conduction.Effects of film thickness on electrical resistivity and Seebeck coefficient were investigated.