中文摘要：

采用闪蒸法在温度为473 K的玻璃基体上沉积了厚度为800 nm的N型Bi2（Te0.95Se0.05）3热电薄膜,并在373～573 K进行1 h的真空退火处理。利用X射线衍射（XRD）、场发射扫描电子显微镜（FESEM）分别对薄膜的物相结构和表面形貌进行分析。采用表面粗糙度测量仪测定薄膜厚度,薄膜的电阻率采用四探针法进行测量,采用温差电动势法在室温下对薄膜的Seebeck系数进行表征。沉积态薄膜表明了（015）衍射峰为最强峰,退火处理后最强衍射峰为（006）;沉积态薄膜由许多纳米晶粒组成,晶粒大小分布较均匀,平均晶粒尺寸大约45 nm,退火处理后出现了斜方六面体的片状晶体结构。退火温度从373 K增加到473 K,薄膜的电阻率和Seebeck系数增加,激活能也随退火温度的增加而增大,退火温度从523 K增加到573 K,薄膜的电阻率和Seebeck系数都缓慢下降。从373～473 K,热电功率因子随退火温度的升高而单调增加,退火温度为473 K时,电阻率和Seebeck系数分别是2.7 mΩ.cm和-180μV.K-1,热电功率因子最大值为12μW.cmK-2。退火温度从523 K增加到573 K,热电功率因子的值逐渐下降。

英文摘要：

N-type Bi2（Te0.95Se0.05）3 thermoelectric thin films with thickness of 800 nm were deposited on glass substrates by flash evaporation method at 473 K.Annealing effects on thermoelectric properties of Bi2（Te0.95Se0.05）3 thin films were examined in the temperature range of 373~573 K for 1 h.The structures and morphology were characterized by X-ray diffraction,field emission scanning electron microscope respectively.Thermoelectric properties of the thin films were evaluated by measurements of the electrical resistivity and Seebeck coefficient.Electrical resistivity of the thin films was measured by a conventional DC four-probe method.The Seebeck coefficient was determined as the ratio of a potential difference across the thin films to a temperature difference at room temperature.It was clear that the as-deposited thin film showed the（015） plane sharp peak with a preferred orientation.When the thin films were annealed,the（006） plane becomes the more intense peak.The as-deposited thin film consisted of many nano-scale grains.The grains were well crystallized and homogeneously distributed.The average grain size was about 45 nm.The annealed thin film showed crystal flakes with a rhombohedral structure.It was clear that the electrical resistivity,Seebeck coefficient and activation energy increased in the temperature range of 373~473 K.With the increase of the annealing temperature,the electrical resistivity and Seebeck coefficient decreased in the temperature range of 523~573 K.The thermoelectric power factors showed a monotonic increase with increasing annealing temperature from 373 to 473 K.When annealed at 473 K,the electrical resistivity and Seebeck coefficient was 2.7 mΩ · cm and-180 μV · K-1 respectively.The maximum of thermoelectric power factor was enhanced to 12 μW · cmK-2.The thermoelectric power factors decreased with increasing annealing temperature from 523 to 573 K.