中文摘要：

采用瞬间蒸发技术在温度为473K的玻璃基体上沉积了厚度为800nm的Ag掺杂Bi2（Te0.955Se0.05）3热电薄膜。利用X射线衍射（XRD）技术对薄膜的物相结构进行表征，采用表面粗糙度测量仪测定薄膜厚度，薄膜的电阻率采用四探针法在室温下进行测量，在室温下对薄膜的Seebeck系数进行表征。Ag的掺杂浓度为0．2％，热电功率因子提高到16．1μW／（cm·K2）。Ag掺杂浓度从0．25％增加到0．5％，薄膜为P型半导体。热电功率因子呈减少的趋势。

英文摘要：

Ag-doped Bi2 （Te0.955Se0.05）3thermoelectric thin films with thickness of 800 nm were deposited on glass substrates by flash evaporation method at 473 K. The structures of the thin films were analyzed by X-ray diffraction. The film thickness of the annealed samples was measured by ellipsometer. Ag doping concentration on thermoelectric power factor of the annealed thin films were investigated by room-temperature measurement of the Seebeck coefficient and electrical resistivity. The thermoelectric power factor was enhanced to 16.1 μW/（cm. K2） at 0.2% Ag doping. The Seebeck coefficients were positive with increasing Ag doping concentration from 0.25% to 0.5%. The thin films show p-type conduction. The thermoelectric power factors show a decreasing tendency.