随着世界各国对节能减排的需求越来越迫切,IGBT在变频家电、工业控制、电动及混合动力汽车、新能源、智能电网等诸多产业获得了广泛的应用空间。与普通MOSFET产品不同,IGBT使用FZ Sub,且Trench深度也因耐压高的要求而更深,因而更需要降低制造过程中的应力变化,提高生产流通性及产品的可靠性。通过对IGBT制造过程中的应力缓解做了一系列研究,并对Trench Poly工艺及后续热处理过程的优化形成了可量产的IGBT工艺流程。
With the increasing demand for energy saving and emission reduction in the world, IGBT has been widely used in many industries, such as variable frequency home appliances, industrial control, electric and hybrid vehicles, new energy, smart grid and many other industries. Different with normal MOSFET products, IGBT use FZ Sub, and Trench depth is deeper to meet the demand of higher breakdown voltage, and therefore need to reduce the stress changes in the manufacturing process, improve process productivity and product reliability. In this paper, a series of studies have been done on the stress relief in the process of IGBT manufacturing, and the IGBT process flow can be formed by optimizing the Trench Poly process and the subsequent thermal treatment process.