中文摘要：

激光退火是绝缘栅双极型晶体管（IGBT）背面工艺的重要步骤。基于一种国产激光退火设备，对激光退火工艺的关键参数如激活率、激活深度与工艺条件之间的关系进行了研究。结果表明：双激光具有比单激光更高的激活率。在使用双激光时，B的激活率与注入剂量有一定的关联，最高激活率可接近80％；磷的激活率也与剂量有一定的关系，最高可以达到100％。对激光退火处理样品进行TEM观察发现，再结晶后的激活区没有晶格缺陷。对采用激光退火工艺的IGBT器件性能分析表明，采用该工艺的器件性能参数基本达到国外竞争对手同类产品的同等水平。

英文摘要：

Laser anneal is an important step of the backside process for insulated gate bipolar tran-sistor （IGBT） devices. Based on a domestic laser anneal equipment, the relationship between key pa-rameters, such as the activation ratio, activation depth and the process conditions were studied. The re-sults show that the double lasers anneal can get higher activation ratio than the single laser. With doublelasers, the activation ratio of boron is dependent to the dos of boron implantation, the highest activationratio can be close to 80%. The activation ratio of phosphorous is also related to its dose, and the highestactivation ratio can reach 100%. The TEM observation of the annealed sample shows that no crystal de-fects can be found in the annealed area. The performances of IGBT device with laser anneal was analyzed.The result shows that the performances of IGBT, are at the same level to that of foreign competitors.