中文摘要：

基于沟槽型超级结MOSFET，研究了硅外延工艺、多晶硅填充工艺和非晶硅填充工艺对沟槽填充效果的影响，以及不同的沟槽填充效果对器件的漏电流的影响。

英文摘要：

Based on new deep trench filling technique of manufacturing super junction device, different trench filling methods including epitaxial growing, epitaxial growing followed by poly- silicon deposition, and epitaxial growing followed by amorphous silicon are studied. Their im- pacts on the leakage of super junction MOSFETs are reported.