中文摘要：

逆导型绝缘栅双极型晶体管是一种新型的IGBT器件,它是将IGBT元胞结构以及快恢复二极管（FRD）元胞结构集成在同一个芯片上。逆导型IGBT器件具有小尺寸、高功率密度、低成本、高可靠性等诸多优点,但是逆导型IGBT的电压回跳现象限制了它在实际中的应用。研究了逆导型IGBT器件的结构原理以及回跳现象产生的原因,介绍了引导区结构和背面版图正交布局两种有效抑制回跳现象的方法。通过合理的设计,逆导型IGBT基本上克服了传统的特性缺陷,这将使逆导型IGBT在未来有更为广阔的应用前景。

英文摘要：

Reverse conducting-insulated gate bipolar transistor（RC-IGBT）is a novel IGBT device which integrates the conventional IGBT and fast recovery diode（FRD）into one single chip.It has many advantages such as smaller chip size,higher power density,lower manufacturing cost and better reliability.However,undesirable voltage snap-back brings great challenge in RC-IGBT and needs to be addressed.The RC-IGBT structure and snap-back fundamentals are thoroughly studied.Two methods,setting pilot IGBT zone and employing orthogonal collector layout,are introduced as potential solutions to significantly alleviate snapback in RC-IGBT.With the proper design to overcome snap-back and optimize device characteristics,RC-IGBT can be utilized in much wider application fields in the future.