低温下,采用水热法,在金属Zn片上制备了Zn/ZnO纳米线电极.扫描电镜(SEM)、透射电镜(TEM)分析结果表明,该ZnO为垂直于基底生长的纳米线结构,并由X射线衍射(XRD)分析得到进一步确认;在该Zn/ZnO电极上旋涂聚3-已基噻吩(P3HT)得到Zn/ZnO/P3HT杂化电极,紫外可见吸收光谱(UV-vis)表明P3HT的存在拓宽了电极的光响应范围;对Zn/P3HT和Zn/ZnO/P3HT电极进行荧光光谱(PL)测试,发现ZnO/P3HT杂化膜的荧光发射强度降低,说明光生激子在复合前即在ZnQ/P3HT异质结界面处发生分离.在此基础上,制作了结构为Zn/ZnO/P3 HT/PEDOT:PSS/ITO的柔性杂化太阳电池,于模拟太阳光(100 mW/cm^2)照射下测试该电池的光电性能:电池的开路电压V∞为334 mV,短路电流密度.Jsc为1.72 mA/cm^2,填充因子FF为0.39,光电转换效率η为0.22%.
Uniform ZnO nanowires arrays are grown directly from and on Zn foils under hydrothermal conditions at a relatively low temperature.Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) analysis showed that the prepared ZnO grown perpendicular to the substrate,and the X-ray diffraction (XRD) confirmed this structure.Zn/ZnO/P3HT hybrid electrode was obtained by coating poly 3-hexylthiophene (P3HT) on Zn/ZnO film,and the ultraviolet visible absorption spectra (UV-vis) indicated the broadened light response range for the presence of P3HT.It was found from the photoluminescence (PL) spectra of Zn/P3HT and Zn/ZnO/P3HT electrodes that the PL emission intensity decreased for the latter one,indicating the excitons dissociate at the ZnO/P3HT heterojunction interface before charge recombination.Based on the prepared electrode,flexible hybrid solar cell with the structure of Zn/ZnO/P3HT/PEDOT:PSS/ITO was assembled and the photovoltaic performance was measured under simulated sunlight (100 mW/cm^2).The cell gave open-circuit voltage (Voc) of 334 mV,short-circuit current (Jsc) of 1.72 mA/cm^2,fill factor (FF) of 0.39,and the photoelectric conversion efficiency (η) is 0.22%.