中文摘要：

采用电化学方法在铟锡氧化物（ITO）导电玻璃上制备了高度有序的ZnO纳米棒阵列，在ZnO纳米棒阵列上先后电化学沉积CdS纳米晶膜及聚3-己基噻吩（P3HT）薄膜得到P3HT修饰的一维有序壳核式CdS亿nO纳米阵列结构，并通过扫描电镜（SEM）、透射电镜（TEM）、X射线衍射（XRD）、能量散射X射线（EDX）等表征手段证实了该结构的形成．以此纳米结构薄膜为光阳极组装新型半导体敏化太阳电池，研究了CdS纳米晶膜的厚度和P3HT薄膜的沉积对电池光伏性能的影响，初步探讨了电荷在电池结构中的传输机理，结果表明，CdS纳米晶膜和P3HT薄膜的沉积有效地拓宽了光阳极的光吸收范围，实验中电池的光电转换效率最高达到1．08％．

英文摘要：

Highly ordered ZnO nanorod arrays were prepared on an indium-tin oxide （ITO） glass substrate using an electrochemical method. The poly（3-hexylthiophene） （P3HT）-modified CdS/ZnO shell- core nanorod arrays were fabricated by electrodepositing CdS nanoparticles and then a thin P3HT layer onto the prepared ZnO nanorod arrays. Scanning electron microscopy （SEM）, transmission electron microscopy （TEM）, X-ray diffraction （XRD）, and energy dispersive X-ray spectroscopy （EDX） were used to characterize the samples to confirm the formation of the designed nanostructures. A semiconductor- sensitized solar cell with the designed nanostructure as the photoanode was fabricated. The effects of the thickness of the CdS layer and the deposition of the P3HT layer on the photovoltaic performance of the designed solar cell were investigated, as well as the charge transfer mechanism of the solar cell. The results indicated that light absorption of the photoanode was broadened to the visible region through the electrodeposition of the CdS nanoparticles and P3HT film onto the ZnO nanorods. An energy conversion efficiency up to 1.08% was obtained with the designed semiconductor-sensitized solar cells.