中文摘要：

研究了采用磁控溅射方法制备的CdS薄膜的工艺及光电性质,在200℃、300℃、400℃和500℃下分别进行50 min的退火处理,SEM扫描发现退火处理后的CdS薄膜成膜质量更好。通过SEM测得CdS薄膜厚度为10μm,计算出CdS薄膜的溅射速率为7.5μm/h。通过探针I-V测试表明,400℃退火处理下,CdS薄膜的光电导特性最为优异,光电流与暗电流之比可达2 134.8。

英文摘要：

The optical and electrical properties of CdS films prepared by R.F.Magnetron Sputtering were analyzed.The sputtered film was annealed at 200 ℃,300 ℃,400 ℃ and 500 ℃,respectively.SEM photos revealed that the annealed CdS thin film had improved quality than un-annealed film.By measurement from SEM,the thickness of CdS thin film is 10 μm,which means the sputtering rate of the CdS thin film is 7.5 μm/h.I-V test has showed that after annealing at 400 ℃,the photoconductivity of the film is most outstanding and the ratio of the photo current and dark current can be up to 2 134.8.