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Structural investigation and luminescent properties of BaZr(BO3)2:Eu3+ phosphors containing Si
  • ISSN号:1673-1905
  • 期刊名称:《光电子快报:英文版》
  • 时间:0
  • 分类:O734.1[理学—晶体学] TN383.1[电子电信—物理电子学]
  • 作者机构:[1]Insititute of Material Physics, Tianjin University of Technology, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, The Tianjin Key Laboratory for Optoelectronic Materials and Devices, Tianjin 300384, China
  • 相关基金:Project supported by the National Basic Research Program of China (Grant No. 6139702), the National Natural Science Foun- dation of China (Grant Nos. 60877029, 60977035 and 60907021), the Natural Science Foundation of the Tianjin Education Committee, China (Grant No. 20071207), and the Natural Science Foundation of Tianjin, China (Grant Nos. 09JCYBJC01400 and 07JCYBJC06400).
中文摘要:

A series of Y3Al5O12:Ce(YAG:Ce) phosphors doped with different Si 4+ concentrations is prepared by solid-state reaction.The temperature dependent characteristics of luminescent spectrum and decay time of Ce 3+ are investigated.With Si 4+ doped,the emission spectrum shows a blue shift due to a decrease of the splitting of 5d levels of Ce 3+ ion.The thermal stability is greatly improved by adding Si 4+ because the activation energy E increases from 0.1836 eV to 0.2401 eV.The study of the decay times against temperature for various doping concentrations of Si 4+ shows that the calculated nonradiative decay rate is affected by Si 4+ substitution.The results are explained by the configurational coordinate diagram.

英文摘要:

A series of aAl5O12:Ce (YAG:Ce) phosphors doped with different Si4+ concentrations is prepared by solid-state reaction. The temperature dependent characteristics of luminescent spectrum and decay time of Ce3+ are investigated. With Si4+ doped, the emission spectrum shows a blue shift clue to a decrease of the splitting of 5d levels of Ce3+ ion. The thermal stability is greatly improved by adding Si4+ because the activation energy AE increases from 0.1836 eV to 0.2401 eV. The study of the decay times against temperature for various doping concentrations of Si4+ shows that the calculated nonradiative decay rate is affected by Si4+ substitution. The results are explained by the configurational coordinate diagram.

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期刊信息
  • 《光电子快报:英文版》
  • 主管单位:
  • 主办单位:天津理工大学
  • 主编:巴恩旭
  • 地址:天津市西青区宾水西道391号
  • 邮编:300384
  • 邮箱:Oelett@yahoo.com.cn
  • 电话:022-23679707 23657134
  • 国际标准刊号:ISSN:1673-1905
  • 国内统一刊号:ISSN:12-1370/TN
  • 邮发代号:6-198
  • 获奖情况:
  • 中国期刊方阵“双效”期刊
  • 国内外数据库收录:
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  • 被引量:147