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中文摘要：
通过溶液法合成了Cu掺杂ZnO量子点。X射线衍射（XRD）和高分辨电子透射电镜（HRTEM）图像显示Cu掺杂ZnO量子点具有六角纤锌矿结构,晶粒大小为4～5nm。Cu掺杂抑制了ZnO量子点颗粒长大。室温光致发光（PL）谱观察到紫外带边和可见区两个发射峰。随着Cu掺杂浓度的增大,紫外荧光峰位发生缓慢红移,由366nm移到370nm;可见区发射峰位发生蓝移,由525nm移到495nm;同时,两个发射峰强度降低。光谱结果表明：Cu的掺入,一方面抑制表面与O空位有关的缺陷,在495nm出现了与Cu1＋有关的发射峰;另一方面,Cu离子掺入ZnO量子点引入一些非辐射中心,降低了自由激子发射。
英文摘要：
Cu-doped ZnO quantum dots （QDs） are synthesized successfully via a solution-phase method.X-ray diffraction patterns（XRD） and high-resolution transmission electron microscopy（HRTEM） images reveal that Cu-doped ZnO QDs are with hexagonal wurtzite ZnO structure in average particle size of 4-5 nm.Room temperature photoluminescence（PL） spectra show an ultraviolet（UV） band edge emission and a visible emission band.With Cu doping concentration increasing from 0 to 1%, the UV emission peak position slowly shifts from 366 nm to 370 nm, while the visible emission peak position shifts from 525 nm to 495 nm.Furthermore, the PL spectra become weak with the increasing of Cu doping concentration.The results suggest that the Cu doping suppresses the emission related to surface oxygen vacancies and defects.The bluish-green peak at 495 nm is attributed to the recombination of a donor-accept pair at the state of Zn＋i and Cu1＋.Moreover, the incorporation of Cu ions into ZnO lattice results in the formation of nonradiative centers, leading to the decrease of excitonic recombination corresponding to the band-edge emission of ZnO.
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