欢迎您！东篱公司
退出
-
申报数据库
-
立项数据库
-
成果数据库
-
项目获奖数据库
中文摘要：
本文通过化学浴沉积法获得了直径约为50 nm,长度约为250 nm 的 ZnO 纳米棒阵列,引入纳米 ZnS 对ZnO纳米棒进行表面修饰,分别制备得到了具有ITO （indium tin oxides）/ZnO/Poly-（3-hexylthiophene）（P3HT）/Au和ITO/ZnO@ZnS/P3HT/Au结构的多层器件。通过I-V 曲线对比讨论了两种结构器件的开启电压,串联电阻,反向漏电流及整流比等参数,认为包含ZnS修饰层器件的开启电压、串联电阻、反向漏电流明显降低,整流比显著增强,展现出更优异的电子传输性能。光致发光光谱分析结果证实由于ZnS使ZnO纳米棒的表面缺陷产生的非辐射复合被明显抑制,弱化了电场激发下的载流子陷获,改善了器件的导电特性。
英文摘要：
In this paper, the ZnO nanorod arrays （NRAs） with a diameter of 50nm and a length of 250 nm were synthesized by chemi-cal bath deposition method. Two devices with structures of ITO （indium tin oxides）/ZnO/poly-（3-hexylthiophene） （P3HT）/Au and ITO/ZnO@ZnS/P3HT/Au were fabricated and their performances were tested and evaluated separately. The I-V curves were mea-sured for discussion of the threshold voltage, series resistance, reverse leakage current, and rectification ratio. Results show that the device with modified ZnO shows a decline in the threshold voltage, series resistance and reverse leakage current, but has an enhanced rectification ratio. The effect of ZnS coating on the improvement of conductive properties of the device could be attributed to the suppression of the non-radiative recombination of surface defects as shown by means of photoluminescence spectrum.
同期刊论文项目
同项目期刊论文
Effect of Cu ions on the morphology, structure and luminescence properties of ZnO nanorod arrays pre
期刊信息
位置：