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Creation of Si nanocrystals from SiO2/Si by He and H ion implantation
  • ISSN号：0168-583X
  • 期刊名称：Nuclear Instruments and Methods In Physics Researc
  • 时间：0
  • 页码：25-29
  • 相关项目：He和H离子注入Si基材料引起的表面剥离及机理研究
作者： Zhang, X. D.|Liu, C. L.|Li, M. K.|Gao, Y. J.|Zhang, D. C.|
同期刊论文项目
He和H离子注入Si基材料引起的表面剥离及机理研究
期刊论文 12 会议论文 7
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