借助于根据密度,功能的理论(DFT ) ,平衡几何学和二的状态(DOS ) 的密度氧化了的第一个原则方法,钻石(100 ) 出现,衔接模型,在顶上模型是计算的。结果显示没有表面状态,位于氧化钻石( 100 )的衔接的模型的乐队差距表面,和在原子价乐队的占据表面状态被归因于非结合的 O 2p 轨道, O2p 和 C 2p 键结轨域,并且 C 2p 和 H 1s 键结轨域。由对比,为氧化钻石(100 ) 的在顶上模型出现,没有住的表面状态在乐队差距存在,它从非结合的 C 2p 和 O 2p orbitals 发源。另外,在原子价乐队的占据表面状态被轨道的非结合的 O 2p 导致, C=O pi 结合。
By means of first principles method on the basis of density functional theory (DFT), the equilibrium geometries and density of states (DOS) of the two oxygenated diamond (100) surfaces, bridging model and on-top model are calculated. The results indicate that there are no surface states located in the band gap of the bridging model of oxygenated diamond (100) surface, and the occupied surface states in the valence band are attributed to the non-bonded O 2p orbital, O 2p and C 2p bonding orbitals, and C 2p and Hls bonding orbitals. By contrast, for the on-top model of oxygenated diamond (100) surface, the unoccupied surface states exist in the band gap, which originate from non-bonded C 2p and O 2p orbitals. In addition, the occupied surface states in the valence band are induced by non-bonded O 2p orbital and the C=Oπ bond.