中文摘要：

GaAs基半导体激光器芯片在空气中解理后，解理腔面会被空气氧化形成腔面缺陷，在腔面形成的缺陷严重影响了器件的寿命。用GaAs衬底表面模拟半导体激光器的解理腔面，研究了不同的光学薄膜对GaAs表面特性的影响。研究结果表明暴露在大气中的GaAs表面会形成Gfd203、A昆03和As205缺陷。在表面镀含氧光学膜的GaAs表面上会形成少量Ga203缺陷，不形成As203和As205缺陷，在表面镀ZnSe光学薄膜的GaAs表面没有形成嗨03缺陷，也没有形成As203和As205缺陷。在GaAs表面上蒸镀ZnSe光学薄膜能有效地抑制GaAs表面缺陷的形成，提高半导体激光器的寿命。

英文摘要：

The surfaces of cleaved GaAs were modified with different optical ZnSe films,grown by vacuum evapora- tion. The electronic structures of the GaAs surfaces, with and without ZnSe coating, were characterized with X-ray photo- electron spectroscopy. The results show that the ZnSe films significantly increases the oxidation resistance of the GaAs sur- face, and reduces the surface density of defects. For example, a large amount of defects, possiblly caused by formation of Ga203,As203,and As2Os, were observed on the GaAs wafer exposed in air; while only a very low density of Ga203-in- duced defect was found to exist on the ZnSe-coated GaAs surfaces. We suggest that the ZnSe coating may considerably im- proves the surface oxidation resistance of GaAs, and increases the reliability and life-time of the GaAs laser devices.