中文摘要：

研究了1．06μmInGaAs／InGaAsP量子阱半导体激光器厘米bar模块的温度特性，测试分析了该模块的输出光功率、阈值电流、转换效率和光谱随注入电流及管芯温度变化的特性。结果表明，器件在15～55℃范围内所测的输出光功率由40．7w降低到29．4w，阈值电流由9．29A升高到17．24A，转换效率由54．22％降低到37．55％，光谱漂移为0．37nm／％，特征温度为68．6K。实验结果表明，为保持器件性能的稳定，在实际应用过程中应该使器件的温度控制在15～25℃范围内。

英文摘要：

The temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode was studied. The output optical power, threshold current, conversion efficiency and spectra of the module were measured and analyzed when the module was operated with different current at different temperature. The results show that the module＇s characteristic changes with the temperature in the range of 15 ℃ to 55 ℃. The module＇s CW output optical power reduced from 40.7 W to 29.4 W. The threshold current increased from 9.29 A to 17.24 A. The conversion efficiency reduced from 54.22% to 37.55%. The lasing wavelength shift is 0.37 nm/℃ and the characteristic temperature is 68.6 K. The temperature of the device in the actual application process should be controlled in the range of 15℃ to 25 ℃ to maintain the stability of the device performance.