中文摘要：

提出了一种非对称异质波导半导体激光器外延结构,即通过优化选择材料体系和结构厚度,对器件外延层的P侧限制结构和N侧限制结构分别设计,从而降低器件的电压损耗,使其满足高输出功率以及高的电光转换效率的要求.从载流子的输运和限制等微观机制出发,对器件的主要输出特性进行了理论分析和数值模拟,并以此为根据设计和制作了一种1060 nm In Ga As/Ga As单量子阱非对称异质波导结构半导体激光器,并对器件的主要输出特性进行了测试.实验结果表明,非对称异质结构是降低器件的电压降、增大限制结构对注入载流子的限制,提高半导体激光器电光转换效率的有效措施.

英文摘要：

An epitaxy structure w ith asymmetric hetero-structure w aveguide for diode laser is presented,w hich w as optimized by selecting material system and thickness of each layer. The different designs in P-confinement and N-confinement reduce voltage loss and meet the requirement of high pow er and high electro-optical efficiency. Based on the theory of transportation and confinement,the principal output characteristics w ere analyzed and simulated. After that,a 1060 nm diode laser w ith single quantum w ell and asymmetric hetero-structure w aveguide w as fabricated and characterized.The measurement results show that asymmetric hetero-structure w aveguide is effective to reduce voltage loss and improve the confinement of injection carriers and electro-optical efficiency.