中文摘要：

设计了一种新的具有高曝光深度的纳米光刻直写头，它由用薄银层制得的V型孔、匹配液和有机固化层组成。 V型孔被用来聚焦入射光束于200 nm的光斑中。直写头通过匹配液在光刻胶上移动，而匹配液与石英基底相结合，构成了表面等离激元（SPP）谐振腔，由传播波及反射波形成的驻波的传播深度将达到几百纳米。模拟证明了新的直写头可通过F-P效应及SPP多次激发增强方式实现在光刻胶中深度曝光，当直写头与光刻胶的间距大于90 nm时，不仅可避免光刻胶和直写头的相对磨损，也有助于降低机械移动工艺的要求，因此在纳米掩模板和纳米光子器件的制备上有较高实际应用的可能性。

英文摘要：

A new direct writing device was designed. It consisted of a V-shaped hole made by Ag, the matching fluid and the organic layer for high exposure depth. 200 nm light spots were obtained by V-shaped hole which focued the incident light beams. Direct-writing head moved onto the photoresist through the matching fluid, and the matching fluid combined with the quartz substrate constructed a surface plasmon polariton （SPP） coupling cavity, which amplified the intensity of the light field in it by SPP effect and resonance. The transmission depth of the standing wave formed by forward and reflected light reached hundreds of nanometers. Simulation results show that using the new direct-write head can achieve deep exposure depth in the resist by F-P effect and SPP effect （multiple excitations）. When the distance between the direct-write head and resist is greater than 90 nm, it can not only avoid the relative wear between the direct-write head and resist, but also help reduce the requirement of the mechanical movement process . Therefore it has high application potential in fabrication of nano-mask and nanophotonic structures.