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双层堆垛长波长InAs/GaAs量子点发光性质研究
  • ISSN号：0253-2239
  • 期刊名称：光学学报
  • 时间：2012
  • 页码：262-267
  • 相关项目：微腔中量子点单光子及纠缠光子的发射与检测
作者： 魏全香|吴兵朋|任正伟|贺振宏|牛智川|
同期刊论文项目
微腔中量子点单光子及纠缠光子的发射与检测
期刊论文 51 会议论文 2
同项目期刊论文
Excitation of Propagating Plasmons in Semi-Infinite Graphene Layer by Free Space Photons
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Observation of Bunched Blinking from Individual CdSe/CdS and CdSe/ZnS Colloidal Quantum Dots
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Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet o
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Experimental investigation of quantum Simpson's paradox
Electron spin dynamics study of bulk p-GaAs: The screening effect
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InAs单量子点中级联辐射光子的关联测量
基于InAs单量子点的单光子干涉
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal
Measurements of a fast nuclear-spin dynamics in a single InAs quantum dot with positively charged ex
Defect of Te-doped GaSb layers grown by molecular beam epitaxy
图形衬底量子线生长制备与荧光特性研究
Coherent versus incoherent light scattering from a quantum dot
Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates
Strain-driven synthesis of self-catalyzed branched GaAs nanowires
Multilayer Antireflection Coating for Triple Junction Solar Cells (vol 28, 047802, 2011)
Raman and photoluminescence spectra on type II InAs/GaSb superlattices
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
半导体InAs量子点单光子发射器件
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Applicatio
High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-
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1.5微米波段GaAs基异变InAs量子点分子束外延生长
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
Effects of Topological Randomness on Cooperation in a Deterministic Prisoner＇s Dilemma Game
Effects of Dimers on Cooperation in the Spatial Prisoner＇s Dilemma Game
An effective reflectance method for designing broadband antireflection films coupled with solar cells
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊信息
  • 《光学学报》
  • 中国科技核心期刊
  • 主管单位:中国科学技术协会
  • 主办单位:中国光学学会 中国科学院上海光学精密机械研究所
  • 主编：曹健林
  • 地址：上海市嘉定区清河路390号
  • 邮编：201800
  • 邮箱：aos@siom.ac.cn
  • 电话：021-69916837
  • 国际标准刊号：ISSN：0253-2239
  • 国内统一刊号：ISSN：31-1252/O4
  • 邮发代号:4-293
  • 获奖情况:
  • 1992年中科院优秀期刊二等奖,1996年第二届上海市优秀期刊评比一等奖,2000年中科院优秀期刊一等奖
  • 国内外数据库收录:
  • 俄罗斯文摘杂志,美国化学文摘（网络版）,荷兰文摘与引文数据库,美国工程索引,日本日本科学技术振兴机构数据库,中国中国科技核心期刊,中国北大核心期刊（2004版）,中国北大核心期刊（2008版）,中国北大核心期刊（2011版）,中国北大核心期刊（2014版）,英国英国皇家化学学会文摘,中国北大核心期刊（2000版）
  • 被引量:33570