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Multilayer Antireflection Coating for Triple Junction Solar Cells (vol 28, 047802, 2011)
  • ISSN号：0256-307X
  • 期刊名称：Chinese Physics Letters
  • 时间：2012.1.1
  • 页码：019901-019904
  • 相关项目：微腔中量子点单光子及纠缠光子的发射与检测
作者： Wang Juan|Huang She-Song|Ni Hai-Qiao|Niu Zhi-Chuan|
同期刊论文项目
微腔中量子点单光子及纠缠光子的发射与检测
期刊论文 51 会议论文 2
同项目期刊论文
Excitation of Propagating Plasmons in Semi-Infinite Graphene Layer by Free Space Photons
GaSb films grown by MBE on GaAs(001) substrates
An effective reflectance method for designing broadband antireflection films coupled with solar cell
Observation of Bunched Blinking from Individual CdSe/CdS and CdSe/ZnS Colloidal Quantum Dots
Photoluminescence study of low density InAs quantum clusters grown by molecular beam epitaxy
双层堆垛长波长InAs/GaAs量子点发光性质研究
Experimental Research on Carrier Redistribution in InAs/GaAs Quantum Dots
Small linewidth and short lifetime of emission from GaAs/AlAs core/shell quantum dots on the facet o
Field-Field and Photon-Photon Correlations of Light Scattered by Two Remote Two-Level InAs Quantum D
Detection of large in-plane spin-dephasing anisotropy in [1 0 0]-grown GaAs/AlGaAs quantum
Complete Deterministic Analyzer for Multi-Electron Greenberger-Horne-Zeilinger States Assisted by Do
Complete and deterministic analysis for spatial-polarization hyperentangled Greenberger-Horne-Zeilin
Spontaneous emission in paired graphene plasmonic waveguide structures
Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire
In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-ass
Single InAs quantum dot coupled to different "environments" in one wafer for quantum photo
Experimental investigation of quantum Simpson's paradox
Electron spin dynamics study of bulk p-GaAs: The screening effect
Enhanced tunneling in the GaAs p(+)-n(+) junction by embedding InAs quantum dots
Temperature dependence of electron-spin relaxation in a single InAs quantum dot at zero applied magn
Emergence and decline of scientific paradigms in a dynamic complex network
InAs单量子点中级联辐射光子的关联测量
基于InAs单量子点的单光子干涉
Surface morphology and crystallographic properties of GaAs films grown by the MBE process on vicinal
Measurements of a fast nuclear-spin dynamics in a single InAs quantum dot with positively charged ex
Defect of Te-doped GaSb layers grown by molecular beam epitaxy
图形衬底量子线生长制备与荧光特性研究
Coherent versus incoherent light scattering from a quantum dot
Tunable Metamorphic Resonant Cavity Enhanced InGaAs Photodetectors Grown on GaAs Substrates
Strain-driven synthesis of self-catalyzed branched GaAs nanowires
Raman and photoluminescence spectra on type II InAs/GaSb superlattices
The refractive nonlinearities of InAs/GaAs quantum dots above-bandgap energy
半导体InAs量子点单光子发射器件
Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Applicatio
High Quality Pseudomorphic In-0.24 GaAs/GaAs Multi-Quantum-Well and Large-Area Transmission Electro-
电场调谐InAs单量子点的发光光谱
1.5微米波段GaAs基异变InAs量子点分子束外延生长
GaAs-based long-wavelength InAs bilayer quantum dots grown by molecular beam epitaxy
Effects of Topological Randomness on Cooperation in a Deterministic Prisoner＇s Dilemma Game
Effects of Dimers on Cooperation in the Spatial Prisoner＇s Dilemma Game
An effective reflectance method for designing broadband antireflection films coupled with solar cells
Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy
期刊信息
  • 《中国物理快报：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国科学院物理研究所、中国物理学会
  • 主编：
  • 地址：北京中关村中国科学院物理研究所内（北京603信箱《中国物理快报》编辑部）
  • 邮编：100080
  • 邮箱：cpl@aphy.iphy.ac.cn
  • 电话：010-82649490 82649024
  • 国际标准刊号：ISSN：0256-307X
  • 国内统一刊号：ISSN：11-1959/O4
  • 邮发代号:
  • 获奖情况:
  • 中国期刊方阵“双高”期刊
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  • 被引量:190