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InAs单量子点中级联辐射光子的关联测量
  • 期刊名称：物理学报
  • 时间：0
  • 页码：693-697
  • 语言：中文
  • 分类：O571.42[理学—粒子物理与原子核物理;理学—物理]
  • 作者机构：[1]中国科学院半导体研究所超晶格与微结构国家重点实验室,北京100083
  • 相关基金：国家自然科学基金（批准号：90921015）资助的课题
  • 相关项目：半导体量子点非经典光辐射效应研究
作者： 李园|窦秀明|倪海桥|常秀英|孙宝权|牛智川|
关键词： InAs单量子点, 单、双激子, 荧光光谱, 级联辐射, single quantum dot, exciton and biexciton, photoluminescence spectrum, cascade emission
中文摘要：

利用分子束外延生长InAs单量子点样品,温度为5K时,测量了单量子点中单、双激子自发辐射的荧光（PL）光谱.研究了单、双激子发光强度随激发功率的变化及对应发光峰的偏振特性和精细结构劈裂.基于Hanbury-Brown Twiss（HBT）实验,测量了单、双激子间发光光谱的关联函数,证实了其发光过程为级联发射过程.

英文摘要：

Single InAs quantum dot （ QD） sample was grown by molecular-beam epitaxy （ MBE）. The Photoluminescences （PL） of the exciton and biexciton in a single QD were measured at 5 K. The PL intensity as a function of the laser excitation power,the fine structure splittings of the exciton and biexciton,and the corresponding linearly polarized emissions were analyzed. By means of Hanbury-Brown and Twiss （HBT） setup,the photon correlation between the PL of exciton and biexciton were measured,which is gave an evidence of the quantum cascade emissions between biexciton and exciton PL.

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期刊论文 51 会议论文 2
半导体量子点非经典光辐射效应研究
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